Single Electrons, Contacts and Forces – What Afm Can Do for Nanoelectronics

نویسنده

  • Peter Grutter
چکیده

In this talk I will give an overview of our attempts to understand electrons in nanoscale structures using various scanning probe techniques. I will first concentrate on our recent attempts to measure single-electron charging in an individual InAs quantum dot with a 4.5 K atomic force microscope (AFM) [1]. The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were measured as a function of the tip-back electrode voltage, and the resulting spectra show distinct jumps when the tip was positioned above the dot. The observed jumps in the frequency shift, with corresponding peaks in dissipation, are attributed to a single-electron tunneling between the dot and the back electrode governed by the Coulomb blockade effect, and are consistent with a model based on the free energy of the system (fig. 1). The observed phenomenon may be regarded as the ‘‘force version’’ of the Coulomb blockade effect. The peaks in dissipation are essentially due to a single electron back action effect on a micromechanical transducer.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Atomic Force Microscopy in Optical Imaging and Characterization

Atomic force microscopy (AFM) is a state of the art imaging system that uses a sharp probe to scan backwards and forwards over the surface of an object. The probe tip can have atomic dimensions, meaning that AFM can image the surface of an object at near atomic resolution. Two big advantages of AFM compared to other methods (for example scanning tunneling microscopy) are: the samples in AFM mea...

متن کامل

Investigation of post-annealing effect on efficient ohmic contact to ZnO thin film using Ti/Al metallization strategy

Ohmic and Schottky contacts are playing a major role in the field of ZnO based electronics device fabrication. It is seen that several works have been reported on metallization scheme, contacts with this semiconducting material. But, the thickness of semiconducting material and the choosing of substrate still remain imperfect and inefficient for advanced IC technology. To estimate contact resis...

متن کامل

A comparative study on required forces for the passage of three different dental flosses at interproximal contacts

A comparative study on required forces for the passage of three different dental flosses at interproximal contacts Dr. M. Ketabi* - Dr. P. Mirzakoocheki** - Dr. S. Zandiye*** * - Assistant Professor of Periodontics Dept. - Faculty of Dentistry – Khorasgan Islamic Azad University. ** -Assistant Professor of Operative Dentistry Dept. - Faculty of Dentistry - Khorasgan Islamic Azad University. ***...

متن کامل

Scanning Probe Techniques for Engineering Nanoelectronic Devices

microscopy-based techniques is enabling new ways to build and investigate nanoscale electronic devices. Here we review several advanced techniques to characterize and manipulate nanoelectronic devices using an atomic force microscope (AFM). Starting from a carbon nanotube (CNT) network device that is fabricated by conventional photolithography (micron-scale resolution) individual carbon nanotub...

متن کامل

The development of the field of nanoelectronics is closely associated with the problem of manipulation of organic molecules o

The development of the field of nanoelectronics is closely associated with the problem of manipulation of organic molecules on the surfaces to assemble the elements of nano-circuits and the circuits themselves. A considerable progress has been made in recent years in the manipulation of single porphyrin-based molecules on metal surfaces with the STM tip [1]. However, for the nanoelectronics pur...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2005